薄膜電容器 R533W520050P0K

薄膜電容器 310VAC 630V 12uF
惡劣環境下(xià)金屬化(huà)聚丙烯膜 EMI 抑制電容器
• X2級(IEC 60384-14)• THB 級 IIIB: 85 ° C，85% RH，310 VAC 1000小時(shí)。至 IEC60384-14
• THB 級 IIIB: 攝氏85度，相對(duì)濕度85% ，560伏直流電壓1,000小時(shí)。額定電壓: 310 VAC 50/60 Hz
•建議(yì)直流電壓≤630 VDC •電容量範圍: 0.1 -22 μF •導線間距: 15.0 -37.5 mm •電容容限: ± 20% ，± 10%
•氣候類别40.110/56，IEC 60068-1•磁帶和(hé)卷軸符合 IEC 60286-2• RoHS 兼容和(hé)無鉛終端
•工作溫度範圍 -40 ° C 至 + 110 ° C
KEMET:
R533I310050P0K R533I315050P0K R533I322050P0K R533I333050P0K R533I333050P1K R533I347050P0K
R533W510050P0K R533W512050P0K R533W515050P0K R533W518050P0K R533W520050P0K
R533W522050P0K R533R439050P0K R533R447050P1M R533R447050P2K R533R456050P0M R533R468050P0K
R533R482050P0K R533N422050P0M R533R415050P0K R533R418050P0K R533R422050P0K
R533R427050P0K R533R433050P0K R533N410050P1M R533N412050P0K R533N415050P0K R533N415050P1M
R533N418050P0K R533N418050P1M R533N347050P1K R533N356050P0K R533N356050P1M
R533N368050P0K R533N382050P0K R533N410050P0K R533I347050P1M R533I347050P3K R533I356050P0K
R533I368050P0K R533I368050P1M R533I382050P0M R533N347050P0K R53BW44705000K